Эффект Ганна - Левинштейн М.Е.
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34. Jeppesen P., Jeppson B. The influence
of diffusion on the stability of the supercritical transferred electron
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СПИСОК ДОПОЛНИТЕЛЬНОЙ ЛИТЕРАТУРЫ
1. Braddock P. W., Gray K- W. Wideband InP transferred electron
amplifiers. Abst. - "Sol.-St. Devices", 1972, In.: Proc. 2nd Eur. Conf.
"Lancaster, 1972", London - Bristol, 1973, p. 205-206.
2. Dean R. H., Matarese R. J. The GaAs travelling-wave amplifier as a
new kind of microwave transistor.-"Proc. IEEE", 1972, v. 60, № 12, p.
1486--1487.
3. Spitalnik R., Shaw M. P., Rabier A., Magarshach J. On the mechanism
for microwave amplification in supercri-tically doped я-GaAs. - "Appl.
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4. Hillbrand H., Rees H. D., Jones D. Theoretical characteristics of
transferred electron amplifiers. -"Electron Lett.", 1974, v. 10, № 7, p.
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Trans.", 1973, v. ED-20, № 6,
p. 600-602.
6. Talwar A. K., Curtice W. R. An expe-
rimental study of stabilized transfer-red-electron amplifiers. - "IEEE
Trans.", 1973, v. MTT-21, № 7,
p. 477-481.
7. Jeppesen P., Jeppsson B. A simple analysis of the stable field
profile in the supercritical TEA. - "IEEE Trans.", 1973, v. ED-20, № 4,
p. 371- 379
8. Lidgey F. J., Foulds K. W. An X-band LSA amplifiers. - "IEEE
Trans.",
1973, v. MTT-21, № 11, p. 736-738.
К главе 11
1. Sandbank С. P. Synthesis of complex electronic functions by solid
state bulk effects. - "Sol.-St. Electron.",
1967, v. 10, № 5, p. 369-380.
