Научная литература
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Физика полупроводниковых приборов - Зи С.М.

Зи С.М. Физика полупроводниковых приборов — М.: Энергия, 1973. — 656 c.
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50. Weiser K., Woods J. F. "Evidence for Avalanche Injection Laser in p-
Type GaAs", Appl. Phys. Letters, 7, 225 (1965).
Дополнительная литература
1. Пикус Г. Е. Основы теории полупроводниковых приборов. М., "Наука",
1965.
СПИСОК ЛИТЕРАТУРЫ К ГЛ. 14
1. Gunn J. В. "Microwave Oscillation of Current in III-V Semiconductors",
Solid State Comm., 1, 88 (1963), and "Instabilities of Current in III-V
Semiconductors", IBM J. of Res. Develop., 8, 141 (1964).
2. Kroemer H. "Theory of the Gunn Effect", Proc. IEEE, 52, 1736
(1964).
3. Ridley В. K., Watkins Т. B. "The Possibility of Negative Resistance
Effects in Semiconductors", Proc. Phys. Soc. (London), 78, 293 (1961).
4. Hilsum C. "Transferred Electron Amplifiers and Oscillators", Proc.
IRE, 50, 185 (1962).
5. Hutson A. R., Jayaraman A., Chynoweth A. G., Coriell A. S., Feldmann
W. L. "Mechanism of ithe Gunn Effect from Pressure Ex-perriment", Phys.
Rev. Letters, 14, 639 (1965).
6. Allen J. W., Shyam М., Chen Y. S., Pearson G. L. "Microwave
Oscillations in GaAsi_xPx Alloys", Appl. Rhys. Letters, 7, 78 (1965).
7. Ridley В. K. "Specific Negative Resistance in Solids", Proc. Phys.
Soc. (London), 82, 954 (1963).
8. McWhorret A. L., Rediker R. H. "The Cryosar - A New Low - Temperature
Computer Component", Proc. IRE, 47, 1207 (1959).
9. Kroemer H. "Negative Conductance in Semiconductors", IEEE Spectrum, 5,
47 (1968).
10. Koenig S. H., Brown R. D., Shillinger W. "Electrical Conduction in "-
type Germanium at Low Temperature", Phys. Rev., 128, 1668
(1962).
11. Rediker R. H., McWhorter A. L. "Compound Cryosars for Low -
Temperature Computer Memories", Solid State Electron., 2, 100 (1961).
12. Melngailis L., Milner A. G. "The Cryosistor - A Field Effect
Controlled Impact Ionization Swich", Proc. IRE, 49, 1616, (1961).
13. Ridley В. K-, Pratt R. G. "А Bulk Differential Negative Resistance
Due to Electron Tunneling Through an Impurity Potential Barrier", Phys.
Letters, 4, 300 (1963).
14.. Kroemer H. "Proposed Negative - Mass Microwave Amplifier", Phys.
Rev., 109, 1856 (1958).
15. Shyam, Kroemer H. "Transverse Negative Differential Mobilities for
Hot' Electrons and Domain Formation in Germanium", Appl. Phys. Letters
(May 1968).
16. Foyt A. G., McWhorter A. L. "The Gunn Effect in Polar
Semiconductors", IEEE Trans. Electron Devices, ED-13, 79 (1966).
17. Ludwig G. W. "Gunn Effect in CdTe", IEEE Trans. Electron Devices, ED-
13, 547 (1967).
18. Oliver M. R., Foyt A. G. "The Gunn Effect in п-CdTe", IEEE Trans.
Electron Devices, ED-14, 617 (1965).
'19. Ludwig G. W., Halsted R. E" Aven M. S. "Gurrent Saturation and
Instability in CdTe and ZnSe", IEEE Trans. Electron Devices, ED-13, 671
(1966).
20. Allen J. W., Shyam М., Pearson G. L. "Gunn Oscillations in Indium
Arsenide", Appl. Phys. Letters, 9, 39 (1966).
21. Holmstrum R. "Gunn - Type Oscillations in Ge, GaAs, and Other
Materials", Proc. IEEE, 56, 331 (1968).
22. McGroddy J. C., Nathan М. I. "Microwave Oscillations in n-Tyipe Ge",
Solid State Device Research Conference, July 19G7.
23. Elkou B. J,, Gunn J. B., McGroddy J. C. "Bulk Negative Differential
Conductivity and Traveling Domains in n-Type Germanium", Appl. Phys.
Letters, II, 253 (1967).
24. Butcher P. N., Fawceti W. "Calculation of the Velocity - Field
Characteristics for Gallium Arsenide", Phys. Letters, 21, 489
(1966).
25. Conwell E. М., Vassell M. O. "High - Field Distribution Function in
GaAs", IEEE Trans. Electron Devices, ED-13, 22 (1966).
26. Ruch J. G., Kino G. S. "Measurement of the Velocity - Field
Characteristics of Gallium Arsenide", Appl. Phys. Letters, 10, 40
(1967).
27. Kroemer H. "Nonlinear Space - Charge Dynamics in a Semiconductor with
Negative Differential Mobility", IEEE Trans. Electron Devices, ED-13, 27
(1966).
28. Birman J. L., Lax M. "Intervalley - Scattering Selection Rules, III-V
Semiconductors", Phys. Rev., 145, 620 (1966).
29. Kroemer H. "Detailed Theory of the Negative Conductance of Bulk
Negative Mobility Amplifiersin the L mil of Zero Ion Density", IEEE
Trans. Electron Devices, ED-14, 476 (1967).
30. McCumber D. E., Chynoweth A. G. "Theory of Negative Conductance
Amplification and Gunn Instabilities in 'Two - Valley' Semiconductors",
IEEE Trans. Electron Devices, ED-13, 4 (1966).
31. Shockley W. "Negative Resistance Arsing from Transit Time in
Semiconductor Diodes", Bell Syst. Tech. J., 33, 799 (1954).
32. McCumber D. E. "Numerical Studies of a Two Valley Model of the Gunn
Effect", International Conference of Research on Semiconductors, Kyoto,
Japan, 1966.
33. Thim H. W., Barber M. R., Hakki B. W., Knight S., Ueno-hara M.
"Microwave Amplification in a Bulk Semiconductor", Appl. Phys. Letters,
7, 167 (1965).
34. Hakki В. W. ."Amplification in Two - Valley Semiconductors", Appl.
Phys., 38, 808 (1967).
35. McWhorter A. L., Foyt A. G. "Bulk GaAs Negative Conductance
Amplifiers", Appl. Phys. Letters, 9, 303- (1966).
36. Holmstrom R. "Small Signal Behavior of Gunn Diodes", IEEE Trans.
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