Физика полупроводниковых приборов Книга 2 - Зи С.
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Experimental Study of GaAs Impatt Oscillator Efficiency, J. Appl. Phys.,
44, 314
(1973).
23. Sze S. М., Gibbons G. Avalanche Breakdown Voltages o! Abrupt and
Linearly Graded p - n Junctions in Ge, Si, GaAs, and GaP, Appl. Phys.
Lett.,
8, 111 (1966).
24. Schroeder W. E., Haddad G. I. Avalanche Region Width in Various
Structures of IMPATT Diodes, Proc. IEEE, 59, 1245 (1971). [Имеется
перевод: Шредер, Хаддад, Ширина слоя умножения в IMPATT-диодах различных
структур. - ТИИЭР, 1971, 59, № 8, 129-132.]
25. Gibbons G., Sze S. М. Avalanche Breakdown in Read and p - i - n
Diodes, Solid State Electron., 11, 225 (1968).
26. Crowell C. R., Sze S. M. Temperature Dependence of Avalanche
Multiplication in Semiconductors, Appl. Phys. Lett., 9, 242 (1966).
27. Bowers H. C. Space-Charge-Limited Nagative Resistance in Avalanche
Diodes, IEEE Trans. Electron Devices, ED-15, 343 (1968).
28. Sze S. М., Shockley W. Unit-Cube Expression for Space-Charge
Resistance, Bell Syst. Tech. J., 46, 837 (1967).
29. Weissglas P. Avalanche and Barrier Injection Devices, in Howes M.
J., Morgan D. V., Eds., Microwave Devices-Device Circuit Interactions,
Wiley, N. Y., 1976, Chap. 3.
30. Misawa T. Multiple Uniform Layer Approximation in Analysis of
Negative Resistance in p - n Junctions in Breakdown, IEEE Trans. Electron
Devices, ED-14, 795 (1967).
31. Scharfetter D. L., Gummel H. K. Large-Signal Analysis of a Silicon
Read Diode Oscillator, IEEE Trans. Electron Devices, ED-16, 64 (1969).
32. Swan С. B., Misawa Т., Marinaccio L. Composite Avalanche Diode
Structures for Increased Power Capability, IEEE Trans. Electron Devices,
ED-14, 684
(1967).
33. Scharfetter D. L. Power-Impedance-Frequency Limitation of IMPATT
Oscillators Calculated from a Scaling Approximation, IEEE Trans. Electron
Devices, ED-18, 536 (1971).
34. Thim H. W.. Poetze H. W. Search for Higher Frequencies in Microwave
Semiconductor Devices, 6th Eur. Solid State Device Res. Conf,, Inst,
Phys. Conf. Ser., 32, 73 (1977).
Лавинно-пролетные диоды
223
35 Seidel Т. Е., Niehaus W. С., lglesias D. h.. Douole-Drilt Silicon
IMPATTs at X Band, IEEE Trans. Electron Devices, ED-21, 523 (1974).
36 Kuvas R. L. Carrier Transport in the Drift Region of Read-Type
Diodes, IEEE Trans. Electron Devices, ED-25, 660 (1978).
37 Hirachi Y., Kobayashi K., Ogasawara K-, Toyama Y. A New Concept for
High Efficiency Operation of Hi - Lo-Туре GaAs IMPATT Diodes, IEEE Trans.
Electron Devices, ED-25, 666 (1978).
38. Blakey P. A., Culshaw B., Giblin R. A. Comprehensive Models for the
Analysis of High Efficiency GaAs IMPATTS, IEEE Trans. Electron Devices,
ED-25, 674 (1978).
39. Nishitani K., Sawano H., lshihara O., lshii Т., Mitsui S. Optimum
Design for High-Power and High Efficiency GaAs Hi - Lo IMPATT Diodes,
IEEE Trans. Electron Devices, ED-26, 210 (1979).
40 Evans W. J. Avalanche Diode Oscillators, in Hershberger W. D., Ed.
Solid State and Quantum Electronics, Wiley, N. Y., 1971.
41. Misawa T. Saturation Current and Large Signal Operation of a Read
Diode, Solid State Electron13, 1363 (1970).
42. Kovel S. R., Gibbons G. The Effect of Unswe.pt Epitaxial Material
on the Microwave Efficiency of IMPATT Diodes, Proc. IEEE Lett., 55, 2066
(1967).
43. Aono Y., Okuto Y. Effect of Undepleted High Resistivity Region on
Microwave Efficiency of GaAs IMPATT Diodes, Proc. IEEE, 63, 724 (1975).
[Имеется перевод: Аоно, Окуто. Влияние нейтрального участка высокоомной
области на к. п. д. IMPATT-диодов из арсенида галлия. - ТИИЭР, 1975, 63,
№ 3, 56-57.]
44. DeLoach В. С., Jr. Thin Skin IMPATTs, IEEE Trans. Microwave Theory
Tech., MTT-18, 72 (1970).
45. Misawa T. High Frequency Fall-Off of IMPATT Diode Efficiency, Solid
State Electron., 15, 457 (1972).
46. Elta М. E., Haddad G. I. Mixed Tunneling and Avalanche Mechanisms
in p ~ n Junctions and Their Effects on Microwave Transit-Time Devices,
IEEE Trans. Electron Devices, ED-25, 694 (1978).
47. Nishizawa J. I., Motoya K., Okuno Y. 200 GHz TUNNETT Diodes, Jpn,
J. Appl. Phys., 17, Suppl. 17-1, 167 (1977).
48. Berenz J. J., Kinoshita J., Hierl T. L., Lee C. A. Orientation
Dependence of я-type GaAs Intrinsic Avalanche Response Time, Electron.
Lett,, 15, 150 (1979).
49. Olsori H. M. A Mechanism for Catastrophic Failure of Avalanche
Diodes, IEEE Trans. Electron Devices, ED-22, 842 (1975).
50. Hines M. F. Noise Theory of Read Type Avalanche Diode, IEEE Trans.
Electron Devices, ED-13, 158 (1966).
51. Gummel H. K., Blue J. L. A Small-Signal Theory of Avalanche Noise
of IMPATT Diodes, IEEE Trans. Electron Devices, ED-14, 569 (1967).
52. Blue J. L. Preliminary Theoretical Results on Low Noise GaAs IMPATT
Diodes, IEEE Device Res. Conf., Seattle, Wash., June 1970.
53. Irvin J. C., Coleman D. J., Johnson W. A., Tatsuguchi I., Decker D.
R., Dunn C. N. Fabrication and Noise Performance of High-Power GaAs
IMPATTs, Proc. IEEE, 59, 1212 (1971). [Имеется перевод: Ирвин, Коулмен,
