Физика полупроводниковых приборов Книга 1 - Зи С.
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27. Redfield D. Revised Model of Asymmetric p - n Junctions, Appl,
Phys, Lett., 35, 182 (1979).
28. Johnson W. C., Panousis P. T. The Influence of Debye Length on the
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29. Chawla B. R., Gummel H. K. Transition Region Capacitance of
Diffused p - n Junctions, IEEE Trans. Electron Devices, ЕД-18, 178
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30. Gummel H. K. Hole-Electron Product of p - n Junctions, Solid State
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31. For a general discussion, see Moll J. L. Physics of Semiconductors,
McGraw-Hill, N. Y., 1964.
32. Strutt M. J. O. Semiconductor Devices, Vol. 1, Semiconductor and
Semiconductor Diodes, Academic, N. Y., 1966, Chap. 2.
33. Schiff L. J. Quantum Mechanics, 2nd ed., McGraw-Hill, N. Y. 1955.
34. Lundbeig P. J., private communication.
35. Sze S. М., Gibbons G. Avalanche Breakdown Voltages of Abrupt and
Linearly Graded p - n Junctions in Ge, Si, GaAs, and GaP, Appl. Phys.
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8, 111 (1966).
36. Warner R. М., Jr., Avalanche Breakdown in Silicon Diffused
Junctions, Solid State Electron., 15, 1303 (1972).
37. Lee М. H., Sze S. M. Orientation Dependence of Breakdown Voltage in
GaAs, Solid State Electron., 23, 1007 (1980).
38. Waldhauser F., private communication.
39. Ghandhi S. K. Semiconductor Power Devices, Wiley, N. Y,, 1977.
40. Crowell C. R., Sze S. M. Temperature Dependence, of Avalanche
Multiplication in Semiconductors, Appl. Phys. Lett., 9, 242 (1966).
41. Chang C. Y., Chiu S. S., Hsu L. P. Temperature Dependence of
Breakdown Voltage in Silicon Abrupt p - n Junctions, IEEE Trans. Electron
Devices, ED-18, 391 (1971).
42. Goetzberger A., McDonal B., Haitz R. H., Scarlet R. M. Avalanche
Effects in Silicon p - n Junction. II. Structurally Perfect Junctions, J,
Appl. Phys., 34, 1591 (1963).
43. Kingston R. H. Switching Time in Junction Dioes and Junction
Transistors, Proc. IRE, 42, 829 (1954).
44. Van der Ziel A. Noise in Measurements, Wiley, N. Y., 1976,
45. Van der Ziel A., Chenette С. H. Noise in Solid State Devices, in
Advances in Electronics and Electron Physics, Vol. 46, Academic, N. Y.,
1978.
46. Levin J. P. Theory of Varistor Electronic Properties, Crit. Rev,
Solid State Sci., 5, 597 (1975).
47. For a review, see Norwood М. H., Shatz E. Voltage Variable
Capacitor Tuning-A Review, Proc. IEEE, 56, 788 (1968).
48. Moline R. A., Foxhall G. F. Ion-Implanted Hyperabrupt Junction
Voltage Variable Capacitors, IEEE Trans. Electron Devices, ЕД-19, 267
(1972).
49. Veloric H. S., Prince М. B. High Voltage Conductivity-Modulated
Silicon Rectifier, Bell Syst, Tech. J36, 975 (1957).
Плоскостные диоды
141
50. Pell Е. М. 1 on Drift in an п - р Junction, J, Appl. Phys., 31, 291
(I960); also Mager J. W. Characteristics of p - i - n Junction Produced
by Ion* Drift Techniques in Silicon, J. Appl. Phys., 33, 2894 (1962).
51. Lucovsky G., Schwartz R. F., Emmons R. B. Transit-Time
Considerations in p - i - n Diodes, J. Appl. Phys., 35, 622 (1964).
52. Chiang Y. S., Denlinger E. J. Low-Resistance All-Epitaxial pin
Diode for Ultra-High-Frequency Applications, RCA Rev,, 38, 390 (1977).
53. Hall R. N. Power Rectifiers and Transistors, Proc. IRE, 40, 1512
(1952).
54. Burtscher J.,'Dannhauser F., Krausse J. Recombination in Thyristor
and Rectifier in Silicon, Solid. State Electron., 18, 35 (1975).
55. Shockley W. U. S. Patent 2569347 (1951).
56. Gubanov A. I., Zh. Tekh. Fiz., 21, 304 (1951); Zh. Eksp. Teor.
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57. Kroemer H. Theory of a Wide-Gap Emitter for Transistors, Proc. IRE,
45, 1535 (1957).
58. Milnes A. G., Feucht D. L. Heterojunctions and Metal -
Semiconductor Junctions, Academic, N. Y., 1972.
59. Sharma B. L., Purohit R. K. Semiconductor Heter о junctions,
Pergamon, London, 1974.
60. Anderson R. L. Experiments on Ge-GaAs Heterojunctions, Solia
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Electron., 5, 341 (1962).
60a. Frensley W. R., Kroemer H, Theory of the Energy-Band Lineup at an
Abrupt Semiconductor Heterojurjction, Phys. Rev. B., 16, 2642 (1977).
61. Chang L. L. The Conduction Properties of Ge-QaAs^* Px n - n
Heterojunctions, Solid State Electron., 8, 721 (1965).
62. Lang D. V., Logan R. A. A Search for Interface States in an
LPE GaAs/AlxGa^x As Heterojunction, Appl. Phys. Lett., 31, 683 (1977),
63. Allyn C. L.; Gossard A. C., Wiegmann W. New Rectifying
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Structure by Molecular Beam Epitaxy, Appl. Phys. Lett., 36, 373 (1980).
64. Dingle R., Stormer H. L., Gossard A, C., Wiegmann W. Electron
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lities in Modulation-Doped Semiconductor Heterojunction Superlattices,
Appl. Phys. Lett., 33, 665 (1978).
65. Chang L. L., Esaki L., Tsu R. Resonant Tunneling in
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uble Barriers, Appl. Phys. Lett., 24, 593 (1974).
66. Hess К., Morkoc H. Shichijo H., Sireetman. Negative Differential
Resi* stance through Real-Space Electron Transfer, Appl, Phys. Lett,,
35,469(1979),
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